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Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 10/25/1990, Vol. 26 Issue 22, p1898-1899, 2p
- Publication Year :
- 1990
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 26
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 86340079
- Full Text :
- https://doi.org/10.1049/el:19901222