Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor.

Details

Language :

English

ISSN :

00135194

Volume :

25

Issue :

8

Database :

Complementary Index

Journal :

Electronics Letters (Institution of Engineering & Technology)

Publication Type :

Academic Journal

Accession number :

86338790

Full Text :

https://doi.org/10.1049/el:19890374