Resonant tunnelling in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD.

Details

Language :

English

ISSN :

00135194

Volume :

24

Issue :

6

Database :

Complementary Index

Journal :

Electronics Letters (Institution of Engineering & Technology)

Publication Type :

Academic Journal

Accession number :

86337811

Full Text :

https://doi.org/10.1049/el:19880217