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Stability and vibrational properties of the hydrogen atom for p-type AlN doped with group-II: a first-principles study.
- Source :
- Journal of Semiconductors; Jun2010, Vol. 31 Issue 6, p062001-062006, 6p
- Publication Year :
- 2010
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 31
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 86090697
- Full Text :
- https://doi.org/10.1088/1674-4926/31/6/062001