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Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs.
- Source :
- IEEE Electron Device Letters; Jan2013, Vol. 34 Issue 1, p117-119, 3p
- Publication Year :
- 2013
-
Abstract
- Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the \SiC/SiO2 interface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 34
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 84489684
- Full Text :
- https://doi.org/10.1109/LED.2012.2228161