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\In0.53\Ga0.47\As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz.
- Source :
- IEEE Electron Device Letters; Jan2013, Vol. 34 Issue 1, p39-41, 3p
- Publication Year :
- 2013
-
Abstract
- We present the first results of a planar Gunn diode made in \In0.53\Ga0.47\As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-\mu\m-wide device with a 1.3- \mu\m active channel length, the highest power achieved was approximately -10 dBm at 164 GHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 34
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 84489643
- Full Text :
- https://doi.org/10.1109/LED.2012.2224841