Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon.

MLA

Meirer, Florian, et al. “Formation of Arsenolite Crystals at Room Temperature after Very High Dose Arsenic Implantation in Silicon.” Applied Physics Letters, vol. 101, no. 23, Dec. 2012, p. 232107. EBSCOhost, https://doi.org/10.1063/1.4769446.

APA

Meirer, F., Giubertoni, D., Demenev, E., Vanzetti, L., Gennaro, S., Fedrizzi, M., Pepponi, G., Mehta, A., Pianetta, P., Steinhauser, G., Vishwanath, V., Foad, M., & Bersani, M. (2012). Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon. Applied Physics Letters, 101(23), 232107. https://doi.org/10.1063/1.4769446

Chicago

Meirer, Florian, Damiano Giubertoni, Evgeny Demenev, Lia Vanzetti, Salvatore Gennaro, Michele Fedrizzi, Giancarlo Pepponi, et al. 2012. “Formation of Arsenolite Crystals at Room Temperature after Very High Dose Arsenic Implantation in Silicon.” Applied Physics Letters 101 (23): 232107. doi:10.1063/1.4769446.