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A C-band AlGaN/GaN HEMT with Cat-CVD SiN passivation developed for an over 100 W operation.
- Source :
- IEEE MTT-S International Microwave Symposium Digest, 2005; 2005, p4-4, 1p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9780780388451
- Database :
- Complementary Index
- Journal :
- IEEE MTT-S International Microwave Symposium Digest, 2005
- Publication Type :
- Conference
- Accession number :
- 82099679
- Full Text :
- https://doi.org/10.1109/MWSYM.2005.1516638