Characteristics of microwave power GaN HEMTs on 4-inch Si wafers.

Authors :: Manohar, S.
Narayanan, A.
Keerti, A.
Pham, A.
Brown, J.
Borges, R.
Linthicum, K.
Source :: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278); 2002, p449-452, 4p
Publication Year :: 2002

Language :: English
ISBNs :: 9780780372399
Database :: Complementary Index
Journal :: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
Publication Type :: Conference
Accession number :: 82004736
Full Text :: https://doi.org/10.1109/MWSYM.2002.1011652