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A 0.25 μm 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme.

Authors :
Mun-Kyu Choi
Byung-Gil Jeon
Nakwon Jang
Byung-Jun Min
Yoon-Jong Song
Sung-Yung Lee
Hyun-Ho Kim
Dong-Jin Jung
Heung-Jin Joo
Kinam Kim
Source :
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315); 2002, p162-162, 1p
Publication Year :
2002

Details

Language :
English
ISBNs :
9780780373358
Database :
Complementary Index
Journal :
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
Publication Type :
Conference
Accession number :
82002983
Full Text :
https://doi.org/10.1109/ISSCC.2002.992986