Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as NO gas sensors in high temperature.

MLA

Khan, S. A., et al. “Silicon-Carbide Schottky Diodes with Sputtered and Laser-Ablated Thin-Pt Gate as NO Gas Sensors in High Temperature.” TRANSDUCERS ’03. 12th International Conference on Solid-State Sensors, Actuators & Microsystems. Digest of Technical Papers (Cat. No.03TH8664), Jan. 2003, p. 528. EBSCOhost, https://doi.org/10.1109/SENSOR.2003.1215370.

APA

Khan, S. A., Gao Wei, de Vasconcelos, E. A., Uchida, H., & Katsube, T. (2003). Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as NO gas sensors in high temperature. TRANSDUCERS ’03. 12th International Conference on Solid-State Sensors, Actuators & Microsystems. Digest of Technical Papers (Cat. No.03TH8664), 528. https://doi.org/10.1109/SENSOR.2003.1215370

Chicago

Khan, S.A., Gao Wei, E.A. de Vasconcelos, H. Uchida, and T. Katsube. 2003. “Silicon-Carbide Schottky Diodes with Sputtered and Laser-Ablated Thin-Pt Gate as NO Gas Sensors in High Temperature.” TRANSDUCERS ’03. 12th International Conference on Solid-State Sensors, Actuators & Microsystems. Digest of Technical Papers (Cat. No.03TH8664), January, 528. doi:10.1109/SENSOR.2003.1215370.