Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET.

Details

Language :

English

ISBNs :

9780780385115

Database :

Complementary Index

Journal :

Proceedings 7th International Conference on Solid-State & Integrated Circuits Technology, 2004

Publication Type :

Conference

Accession number :

81872261

Full Text :

https://doi.org/10.1109/ICSICT.2004.1435005