Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED.

MLA

Qasaimeh, O., et al. “Ultra-Low Power Monolithically Integrated InGaAs/GaAs Phototransceiver Incorporating a Modulated Barrier Photodiode and a Quantum Dot Microcavity LED.” LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings 13th Annual Meeting. IEEE Lasers & Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080), Jan. 2000, p. 285. EBSCOhost, https://doi.org/10.1109/LEOS.2000.890789.

APA

Qasaimeh, O., Zhou, W., Bhattacharya, P., Huffaker, D., & Deppe, D. (2000). Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED. LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings 13th Annual Meeting. IEEE Lasers & Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080), 285. https://doi.org/10.1109/LEOS.2000.890789

Chicago

Qasaimeh, O., W. Zhou, P. Bhattacharya, D. Huffaker, and D. Deppe. 2000. “Ultra-Low Power Monolithically Integrated InGaAs/GaAs Phototransceiver Incorporating a Modulated Barrier Photodiode and a Quantum Dot Microcavity LED.” LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings 13th Annual Meeting. IEEE Lasers & Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080), January, 285. doi:10.1109/LEOS.2000.890789.