Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures.

Details

Language :

English

ISBNs :

9781424401093

Database :

Complementary Index

Journal :

2006 International Semiconductor Conference

Publication Type :

Conference

Accession number :

81717729

Full Text :

https://doi.org/10.1109/SMICND.2006.283992