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Gate stack etch induced reliability issues in nitrided-based trapping storage cells.

Authors :
Yeh, T.H.
Lin, S.W.
Chen, Y.J.
Chen, K.F.
Huang, J.S.
Cheng, C.H.
Chong, L.H.
Ku, S.H.
Zous, N.K.
Huang, I.J.
Han, T.T.
Chen, M.S.
Lu, W.P.
Chen, K.C.
Wang, T.
Lu, C.
Source :
2010 International Symposium on VLSI Technology Systems & Applications (VLSI-TSA); 2010, p48-49, 2p
Publication Year :
2010

Details

Language :
English
ISBNs :
9781424450633
Database :
Complementary Index
Journal :
2010 International Symposium on VLSI Technology Systems & Applications (VLSI-TSA)
Publication Type :
Conference
Accession number :
81674354
Full Text :
https://doi.org/10.1109/VTSA.2010.5488953
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