Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI.

Details

Language :

English

ISBNs :

9781424454303

Database :

Complementary Index

Journal :

2010 IEEE International Reliability Physics Symposium (IRPS)

Publication Type :

Conference

Accession number :

81658803

Full Text :

https://doi.org/10.1109/IRPS.2010.5488832