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The influence of decoupling capacitor on the discharge behavior of fully silcided power-clamped device under HBM ESD event.

Authors :
Jian-Hsing Lee
Shih, J.R.
Kuan, H.P.
Wu, K.
Source :
2010 17th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2010, p1-5, 5p
Publication Year :
2010

Details

Language :
English
ISBNs :
9781424455966
Database :
Complementary Index
Journal :
2010 17th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)
Publication Type :
Conference
Accession number :
81643237
Full Text :
https://doi.org/10.1109/IPFA.2010.5532248