Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM).

MLA

Yong Kong Siew, et al. “Integration of 20nm Half Pitch Single Damascene Copper Trenches by Spacer-Defined Double Patterning (SDDP) on Metal Hard Mask (MHM).” Interconnect Technology Conference (IITC), 2010 International, Jan. 2010, pp. 1–3. EBSCOhost, https://doi.org/10.1109/IITC.2010.5510743.

APA

Yong Kong Siew, Versluijs, J., Kunnen, E., Ciofi, I., Alaerts, W., Dekkers, H., Volders, H., Suhard, S., Cockburn, A., Sleeckx, E., Van Besien, E., Struyf, H., Maenhoudt, M., Noori, A., Padhi, D., Shah, K., Gravey, V., & Beyer, G. (2010). Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM). Interconnect Technology Conference (IITC), 2010 International, 1–3. https://doi.org/10.1109/IITC.2010.5510743

Chicago

Yong Kong Siew, J. Versluijs, E. Kunnen, I. Ciofi, W. Alaerts, H. Dekkers, H. Volders, et al. 2010. “Integration of 20nm Half Pitch Single Damascene Copper Trenches by Spacer-Defined Double Patterning (SDDP) on Metal Hard Mask (MHM).” Interconnect Technology Conference (IITC), 2010 International, January, 1–3. doi:10.1109/IITC.2010.5510743.