InGaAsN as absorber in APDs for 1.3 micron wavelength applications.

Authors :: Ng, J.S.
Tan, S.L.
Goh, Y.L.
Tan, C.H.
David, J.P.R.
Allam, J.
Sweeney, S.J.
Adams, A.R.
Source :: 2010 International Conference on Indium Phosphide & Related Materials (IPRM); 2010, p1-4, 4p
Publication Year :: 2010

Language :: English
ISBNs :: 9781424459193
Database :: Complementary Index
Journal :: 2010 International Conference on Indium Phosphide & Related Materials (IPRM)
Publication Type :: Conference
Accession number :: 81613007
Full Text :: https://doi.org/10.1109/ICIPRM.2010.5516060