Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations.

Details

Language :

English

ISBNs :

9780780392687

Database :

Complementary Index

Journal :

IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest

Publication Type :

Conference

Accession number :

81610722

Full Text :

https://doi.org/10.1109/IEDM.2005.1609459