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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON.

Details

Language :
English
ISBNs :
9780780392687
Database :
Complementary Index
Journal :
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
Publication Type :
Conference
Accession number :
81610696
Full Text :
https://doi.org/10.1109/IEDM.2005.1609433