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CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON.
- Source :
- IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p649-649, 1p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9780780392687
- Database :
- Complementary Index
- Journal :
- IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
- Publication Type :
- Conference
- Accession number :
- 81610696
- Full Text :
- https://doi.org/10.1109/IEDM.2005.1609433