Pre-existing and process induced defects in high-k gate dielectrics ∼direct observation with EBIC and impact on 1/f noise∼.

Details

Language :

English

ISBNs :

9781424457731

Database :

Complementary Index

Journal :

2010 IEEE International Conference on IC Design & Technology (ICICDT)

Publication Type :

Conference

Accession number :

81609305

Full Text :

https://doi.org/10.1109/ICICDT.2010.5510282