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A novel robust TiN/AHO/TiN capacitor and CoSi2 cell pad structure for 70nm stand-alone and embedded DRAM technology and beyond.

Authors :
Park, J.M.
Hwang, Y.S.
Hwang, D.S.
Hwang, H.K.
Lee, S.H.
Kim, G.Y.
Jeong, M.Y.
Park, B.J.
Kim, S.E.
Cho, M.H.
Kim, D.I.
Chung, J.-H.
Park, I.S.
Yoo, C.-Y.
Lee, J.H.
Nam, B.Y.
Park, Y.R.
Kim, C.-S.
Sun, M.-C.
Ku, J.-H.
Source :
Digest. International Electron Devices Meeting; 2002, p823-826, 4p
Publication Year :
2002

Details

Language :
English
ISBNs :
9780780374621
Database :
Complementary Index
Journal :
Digest. International Electron Devices Meeting
Publication Type :
Conference
Accession number :
81599357
Full Text :
https://doi.org/10.1109/IEDM.2002.1175964
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