High voltage SJ-pLDMOS with Variation Lateral Doping drift layer.

Details

Language :

English

ISBNs :

9781424482245

Database :

Complementary Index

Journal :

2010 International Conference on Communications, Circuits & Systems (ICCCAS)

Publication Type :

Conference

Accession number :

81579720

Full Text :

https://doi.org/10.1109/ICCCAS.2010.5581945