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Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys.
- Source :
- 2009 International Conference on Simulation of Semiconductor Processes & Devices; 2009, p1-4, 4p
- Publication Year :
- 2009
Details
- Language :
- English
- ISBNs :
- 9781424439748
- Database :
- Complementary Index
- Journal :
- 2009 International Conference on Simulation of Semiconductor Processes & Devices
- Publication Type :
- Conference
- Accession number :
- 81527028
- Full Text :
- https://doi.org/10.1109/SISPAD.2009.5290249