Cite
2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs.
MLA
Muraoka, S., et al. “2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs.” 2009 International Conference on Simulation of Semiconductor Processes & Devices, Jan. 2009, pp. 1–4. EBSCOhost, https://doi.org/10.1109/SISPAD.2009.5290192.
APA
Muraoka, S., Mukai, R., Souma, S., & Ogawa, M. (2009). 2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs. 2009 International Conference on Simulation of Semiconductor Processes & Devices, 1–4. https://doi.org/10.1109/SISPAD.2009.5290192
Chicago
Muraoka, S., R. Mukai, S. Souma, and M. Ogawa. 2009. “2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs.” 2009 International Conference on Simulation of Semiconductor Processes & Devices, January, 1–4. doi:10.1109/SISPAD.2009.5290192.