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A novel trench IGBT with a rectangular oxide beneath the trench gate.
- Source :
- 2009 1st Asia Symposium on Quality Electronic Design; 2009, p370-373, 4p
- Publication Year :
- 2009
Details
- Language :
- English
- ISBNs :
- 9781424449521
- Database :
- Complementary Index
- Journal :
- 2009 1st Asia Symposium on Quality Electronic Design
- Publication Type :
- Conference
- Accession number :
- 81395351
- Full Text :
- https://doi.org/10.1109/ASQED.2009.5206237