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Effects of HfO2 trapping layer in Gd2O3 nanocrystal nonvolatile memory with multi-tunneling layers.
- Source :
- 2011 International Conference of Electron Devices & Solid-State Circuits (EDSSC); 2011, p1-3, 3p
- Publication Year :
- 2011
Details
- Language :
- English
- ISBNs :
- 9781457719981
- Database :
- Complementary Index
- Journal :
- 2011 International Conference of Electron Devices & Solid-State Circuits (EDSSC)
- Publication Type :
- Conference
- Accession number :
- 81371018
- Full Text :
- https://doi.org/10.1109/EDSSC.2011.6117603