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Varying sputtering ambient and annealing gas to optimize the electrical properties of MOS capacitor with HfLaO gate dielectric.
- Source :
- 2010 IEEE International Conference of Electron Devices & Solid-State Circuits (EDSSC); 2010, p1-4, 4p
- Publication Year :
- 2010
Details
- Language :
- English
- ISBNs :
- 9781424499977
- Database :
- Complementary Index
- Journal :
- 2010 IEEE International Conference of Electron Devices & Solid-State Circuits (EDSSC)
- Publication Type :
- Conference
- Accession number :
- 81370971
- Full Text :
- https://doi.org/10.1109/EDSSC.2010.5713772