Back to Search Start Over

Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs.

Authors :
Thareja, G.
Chopra, S.
Adams, B.
Patil, N.
Ta, Y.
Porshnev, P.
Kim, Y.
Moffatt, S.
Loftis, D.
Brennan, R.
Goodman, G.
Abdelrehim, I.
Saraswat, K.
Nishi, Y.
Source :
2010 Device Research Conference (DRC); 2010, p23-24, 2p
Publication Year :
2010

Details

Language :
English
ISBNs :
9781424465620
Database :
Complementary Index
Journal :
2010 Device Research Conference (DRC)
Publication Type :
Conference
Accession number :
81350739
Full Text :
https://doi.org/10.1109/DRC.2010.5551970
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details