Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions.

Details

Language :

English

ISBNs :

9780780383159

Database :

Complementary Index

Journal :

Proceedings of the 2004 IEEE International Reliability Physics Symposium

Publication Type :

Conference

Accession number :

81341559

Full Text :

https://doi.org/10.1109/RELPHY.2004.1315376