Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm.

Details

Language :

English

ISBNs :

9781424428885

Database :

Complementary Index

Journal :

2009 IEEE International Reliability Physics Symposium

Publication Type :

Conference

Accession number :

81322688

Full Text :

https://doi.org/10.1109/IRPS.2009.5173332