High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability.

Details

Language :

English

ISBNs :

9781424446957

Database :

Complementary Index

Journal :

2009 IEEE Nanotechnology Materials & Devices Conference

Publication Type :

Conference

Accession number :

81314044

Full Text :

https://doi.org/10.1109/NMDC.2009.5167527