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Discrete and Half Bridge Module using GaN HFETs for High Temperature Applications more than 200?C.
- Source :
- Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p117-120, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISBNs :
- 9781424410965
- Database :
- Complementary Index
- Journal :
- Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's
- Publication Type :
- Conference
- Accession number :
- 81229071
- Full Text :
- https://doi.org/10.1109/ISPSD.2007.4294946