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Discrete and Half Bridge Module using GaN HFETs for High Temperature Applications more than 200?C.

Authors :
Nomura, T.
Masuda, M.
Yoshida, S.
Yamate, T.
Sudo, Y.
Takeda, J.
Source :
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p117-120, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424410965
Database :
Complementary Index
Journal :
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's
Publication Type :
Conference
Accession number :
81229071
Full Text :
https://doi.org/10.1109/ISPSD.2007.4294946