New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT).

Details

Language :

English

ISBNs :

9780780373181

Database :

Complementary Index

Journal :

Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics

Publication Type :

Conference

Accession number :

81228613

Full Text :

https://doi.org/10.1109/ISPSD.2002.1016168