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Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices.

Authors :
Rudan, M.
Reggiani, S.
Gnani, E.
Baccarani, G.
Corvasce, C.
Barlini, D.
Ciappa, M.
Fichtner, W.
Denison, M.
Jensen, N.
Groos, G.
Stecher, M.
Source :
Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, p565-568, 4p
Publication Year :
2005

Details

Language :
English
ISBNs :
9780780392038
Database :
Complementary Index
Journal :
Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005)
Publication Type :
Conference
Accession number :
81225904
Full Text :
https://doi.org/10.1109/ESSDER.2005.1546711