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Silicidation induced strain phenomena in totally silicided (TOSI) gate transistors.
- Source :
- Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, p427-430, 4p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9780780392038
- Database :
- Complementary Index
- Journal :
- Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005)
- Publication Type :
- Conference
- Accession number :
- 81225869
- Full Text :
- https://doi.org/10.1109/ESSDER.2005.1546676