Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond.

Details

Language :

English

ISBNs :

9780780384248

Database :

Complementary Index

Journal :

International Meeting for Future of Electron Devices, 2004

Publication Type :

Conference

Accession number :

81182271

Full Text :

https://doi.org/10.1109/IMFEDK.2004.1566439