Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes.

MLA

Guoqiao Tao, et al. “Fast Wafer Level Monitoring of Stress Induced Leakage Current in Deep Sub-Micron Embedded Non-Volatile Memory Processes.” IEEE International Integrated Reliability Workshop Final Report, 2002, Jan. 2002, pp. 76–78. EBSCOhost, https://doi.org/10.1109/IRWS.2002.1194237.

APA

Guoqiao Tao, Scarpa, A., Valk, H., van Marwijk, L., van Dijk, K., & Kuper, F. (2002). Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes. IEEE International Integrated Reliability Workshop Final Report, 2002, 76–78. https://doi.org/10.1109/IRWS.2002.1194237

Chicago

Guoqiao Tao, A. Scarpa, H. Valk, L. van Marwijk, K. van Dijk, and F. Kuper. 2002. “Fast Wafer Level Monitoring of Stress Induced Leakage Current in Deep Sub-Micron Embedded Non-Volatile Memory Processes.” IEEE International Integrated Reliability Workshop Final Report, 2002, January, 76–78. doi:10.1109/IRWS.2002.1194237.