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Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects.
- Source :
- ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p223-226, 4p
- Publication Year :
- 2003
Details
- Language :
- English
- ISBNs :
- 9780780379992
- Database :
- Complementary Index
- Journal :
- ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003
- Publication Type :
- Conference
- Accession number :
- 81132947
- Full Text :
- https://doi.org/10.1109/ESSDERC.2003.1256854