Subthreshold characteristics of p-type triple-gate MOSFETs.

Authors :: Lemme, M.
Mollenhauer, T.
Henschel, W.
Wahlbrink, T.
Gottlob, H.
Efavi, J.
Baus, M.
Winkler, O.
Spangenberg, B.
Kurz, H.
Source :: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p123-126, 4p
Publication Year :: 2003

Language :: English
ISBNs :: 9780780379992
Database :: Complementary Index
Journal :: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003
Publication Type :: Conference
Accession number :: 81132922
Full Text :: https://doi.org/10.1109/ESSDERC.2003.1256826