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Design methodology of FinFET devices that meet IC-Level HBM ESD targets.

Authors :
Thijs, S.
Russ, C.
Tremouilles, D.
Griffoni, A.
Linten, D.
Scholz, M.
Collaert, N.
Rooyackers, R.
Jurczak, M.
Sawada, M.
Nakaei, T.
Hasebe, T.
Duvvury, C.
Gossner, H.
Groeseneken, G.
Source :
EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium; 2008, p294-302, 9p
Publication Year :
2008

Details

Language :
English
ISBNs :
9781585371464
Database :
Complementary Index
Journal :
EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium
Publication Type :
Conference
Accession number :
81132205

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