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CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach.
- Source :
- 2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p198-199, 2p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9784900784000
- Database :
- Complementary Index
- Journal :
- 2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology
- Publication Type :
- Conference
- Accession number :
- 81129071
- Full Text :
- https://doi.org/10.1109/.2005.1469266