A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices.

Details

Language :

English

ISBNs :

9784900784000

Database :

Complementary Index

Journal :

2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology

Publication Type :

Conference

Accession number :

81129027

Full Text :

https://doi.org/10.1109/.2005.1469222