GaAsSbN: a material for 1.3-1.55 μm emission.

Authors :: Ungaro, G.
Sagnes, L.
Le Roux, G.
Largeau, L.
Patriarche, G.
Saint-Girons, J.
Harmand, J.C.
Source :: Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p553-556, 4p
Publication Year :: 2000

Language :: English
ISBNs :: 9780780363205
Database :: Complementary Index
Journal :: Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107)
Publication Type :: Conference
Accession number :: 81123044
Full Text :: https://doi.org/10.1109/ICIPRM.2000.850357