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1.3 μm strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm2/well).

Authors :
Otsubo, K.
Sekine, N.
Nishijima, Y.
Aoki, O.
Kuramata, A.
Ishikawa, H.
Source :
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092); 2000, p111-112, 2p
Publication Year :
2000

Details

Language :
English
ISBNs :
9780780362598
Database :
Complementary Index
Journal :
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Publication Type :
Conference
Accession number :
81119285
Full Text :
https://doi.org/10.1109/ISLC.2000.882313