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1.3 μm strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm2/well).
- Source :
- Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092); 2000, p111-112, 2p
- Publication Year :
- 2000
Details
- Language :
- English
- ISBNs :
- 9780780362598
- Database :
- Complementary Index
- Journal :
- Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
- Publication Type :
- Conference
- Accession number :
- 81119285
- Full Text :
- https://doi.org/10.1109/ISLC.2000.882313