A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.

Details

Language :

English

ISBNs :

9781424429523

Database :

Complementary Index

Journal :

2009 10th International Symposium on Quality Electronic Design

Publication Type :

Conference

Accession number :

81063779

Full Text :

https://doi.org/10.1109/ISQED.2009.4810262