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Effect of random impurities on transport characteristics of nano-scale MOSFET.
- Source :
- 2008 International Conference on Simulation of Semiconductor Processes & Devices; 2008, p213-216, 4p
- Publication Year :
- 2008
Details
- Language :
- English
- ISBNs :
- 9781424417537
- Database :
- Complementary Index
- Journal :
- 2008 International Conference on Simulation of Semiconductor Processes & Devices
- Publication Type :
- Conference
- Accession number :
- 81048064
- Full Text :
- https://doi.org/10.1109/SISPAD.2008.4648275