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A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide.
- Source :
- 2008 IEEE International Reliability Physics Symposium; 2008, p210-214, 5p
- Publication Year :
- 2008
Details
- Language :
- English
- ISBNs :
- 9781424420490
- Database :
- Complementary Index
- Journal :
- 2008 IEEE International Reliability Physics Symposium
- Publication Type :
- Conference
- Accession number :
- 81020784
- Full Text :
- https://doi.org/10.1109/RELPHY.2008.4558888