Cite
Impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFETs.
MLA
Lang Zeng, et al. “Impact of Gate Misalignment on the Performance of Dopant-Segregated Schottky Barrier MOSFETs.” 2008 9th International Conference on Solid-State & Integrated-Circuit Technology, Jan. 2008, pp. 504–07. EBSCOhost, https://doi.org/10.1109/ICSICT.2008.4734574.
APA
Lang Zeng, Xiao Yan Liu, Gang Du, Jin Feng Kang, & Ru Qi Han. (2008). Impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFETs. 2008 9th International Conference on Solid-State & Integrated-Circuit Technology, 504–507. https://doi.org/10.1109/ICSICT.2008.4734574
Chicago
Lang Zeng, Xiao Yan Liu, Gang Du, Jin Feng Kang, and Ru Qi Han. 2008. “Impact of Gate Misalignment on the Performance of Dopant-Segregated Schottky Barrier MOSFETs.” 2008 9th International Conference on Solid-State & Integrated-Circuit Technology, January, 504–7. doi:10.1109/ICSICT.2008.4734574.